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300MHz-to-450MHz Low-Power,
Crystal-Based ASK Transmitter
ELECTRICAL CHARACTERISTICS (continued)
( Typical Application Circuit , output power is referenced to 50 ? , V DD = 2.1V to 3.6V, V ENABLE = V DD , T A = -40 ° C to +125 ° C, unless
otherwise noted. Typical values are at V DD = 2.7V, T A = +25 ° C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
PHASE-LOCKED LOOP PERFORMANCE
VCO Gain
330
MHz/V
Phase Noise
Maximum Carrier Harmonics
Reference Spur
Loop Bandwidth
f RF = 315MHz
f RF = 433MHz
f RF = 315MHz
f RF = 433MHz
f RF = 315MHz
f RF = 433MHz
f OFFSET =100kHz
f OFFSET = 1MHz
f OFFSET =100kHz
f OFFSET = 1MHz
-84
-91
-82
-89
-50
-50
-75
-81
1.6
dBc/Hz
dBc
dBc
MHz
Crystal Frequency
Oscillator Input Capacitance
Frequency Pushing by V DD
f XTAL
From each XTAL pin to GND
f RF / 32
6.2
3
MHz
pF
ppm/V
DIGITAL INPUTS
Data Input High
Data Input Low
Maximum Input Current
Pulldown Current
V IH
V IL
V DD - 0.25
2
25
0.25
V
V
nA
μA
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
100% tested at T A = +25°C. Guaranteed by design and characterization over temperature.
50% duty cycle at 10kHz data.
Guaranteed by design and characterization, not production tested.
Generally limited by PC board layout.
Output power can be adjusted with external resistor.
Guaranteed by design and characterization at f RF = 315MHz.
V ENABLE < V IL to V ENABLE > V IH . f OFFSET is defined as the frequency deviation from the desired carrier frequency.
V ENABLE > V IH , V DATA > V IH , Efficiency = P OUT /(V DD x I DD ).
V ENABLE > V IH , DATA toggled from V IL to V IH , 10kHz, 50% duty cycle, Efficiency = P OUT /(V DD x I DD ).
3
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